The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1988
Filed:
Aug. 25, 1986
Derrick W Foster, Fremont, CA (US);
Anicon, Inc., San Jose, CA (US);
Abstract
Thermal CVD process for forming Si.sub.3 N.sub.4 -type films on substrates by reaction of gaseous NF.sub.3 with gaseous disilane at a temperature in the range of 250.degree.-500.degree. C., at pressures of 0.1-10 Torr. The mole ratio of NF.sub.3 to silane is in the range of 0.5-3.0 and the reaction zone is preferably isothermal (T controlled to within .sup.+ 5.degree. C.). The resulting films have RI's in the range of 1.4 to 3.0. The process parameters can be controlled to dope the film with H and/or F, or to create zones of differing properties within the film. The process does not cause radiation damage, metal migration, stored charge dissipation or high levels of impurities. Control of distance between adjacent wafers and wafer-to-wall spacing combined with laminar gas flow gives excellent film thickness uniformity, on the order of below about .+-.5% across the wafer face, both within (across) wafers and from wafer to wafer (batch uniformity).