The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1988
Filed:
Dec. 26, 1985
Applicant:
Inventors:
Katsumi Nakagawa, Tokyo, JP;
Toshiyuki Komatsu, Yokohama, JP;
Yutaka Hirai, Tokyo, JP;
Yoshiyuki Osada, Yokosuka, JP;
Satoshi Omata, Tokyo, JP;
Takashi Nakagiri, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 59 ; 357-2 ; 357 61 ; 357 30 ; 357-4 ; 430 84 ;
Abstract
A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.