The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 1988

Filed:

Jul. 08, 1986
Applicant:
Inventors:

Junichi Nishizawa, Sendai-shi, Miyagi, JP;

Takashige Tamamushi, Miyagi, JP;

Sobei Suzuki, Miyagi, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H04N / ;
U.S. Cl.
CPC ...
357 30 ; 357 22 ; 35821312 ;
Abstract

A semiconductor imaging device employing SIT (Static Induction Transistor) pixels having in the control gate region of each pixel a capacitor having optimum properties. Each pixel is constituted by an SIT having a pair of principal electrode regions of one conduction type facing one another through a highly resistive channel region. First and second gate regions of the other conduction type in contact with the channel region control the current flow between the two principal electrode regions. A transparent electrode is formed on at least part of the first gate region through a capacitor. Carriers generated by light excitation stored in the first gate region effectively control the current flow between the principal regions. A transparent electrically conductive layer is formed on the first gate region of each SIT through a nitride layer. The conductive layer serves as an electrode to connect the first gate region to the output of a gate control circuit.


Find Patent Forward Citations

Loading…