The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1988
Filed:
Feb. 12, 1986
Applicant:
Inventors:
Federico Capasso, Westfield, NJ (US);
James A Cooper, Jr, Warren, NJ (US);
Karvel K Thornber, Berkeley Heights, NJ (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 16 ; 357 88 ;
Abstract
Semiconductor structures suitable for repeated velocity overshoot are described. The structure comprises at least two velocity overshoot sections with each section comprising a first semiconductor region having a rapid change in potential and a dimension such that the carrier transit time is comparable to or shorter than the mean scattering time and a second semiconductor region having a more gradual change in potential and a dimension such that the carrier transit time is sufficient to allow the energy relaxation time to be exceeded.