The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1988
Filed:
Nov. 22, 1985
Lawrence A Godfrey, Rowland Heights, CA (US);
Applied Solar Energy Corporation, City of Industry, CA (US);
Abstract
Photodiode structure and method of manufacturing the same, wherein the photodiode has a combination of very high shunt resistance and exceptionally low capacitance with only a slight loss in sensitivity. The diode junction is formed by a narrow line, and the geometry of the device can take many forms. The device has a typical shunt resistance of 150 megohms and a typical capacitance of 80 picofarads for an equivalent photosensitive area of 1 cm.sup.2, which cannot be achieved by current standard technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile