The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1988
Filed:
Jun. 27, 1986
Atsushi Yusa, Ina, JP;
Toshimasa Akagi, Hachioji, JP;
Tomoji Ishii, Nagano, JP;
Yoshinori Ohta, Nagano, JP;
Olympus Optical Co., Ltd., , JP;
Abstract
A solid state image pick-up device with a shutter function including a number of charge coupled devices of vertical overflow domain type is disclosed. A light receiving portion comprises a p.sup.- epitaxial layer arranged on a main surface of an n.sup.+ substrate and an n.sup.+ diffusion surface region is provided in a surface of the p.sup.- layer. A p.sup.+ control gate for controlling a potential barrier between the n.sup.+ diffusion surface region and the p.sup.- epitaxial layer is formed in the epitaxial layer adjacent to the light receiving portion, and a p well region is formed in the epitaxial layer adjacent to the light receiving portion. During a shutter close period, i.e. before a signal charge storing operation, a control voltage applied to the control gate and a reverse bias voltage applied across the n.sup.+ substrate and p.sup.- epitaxial layer are so adjusted that a potential barrier between the epitaxial layer and surface region is made sufficiently small to completely discharge all the charge stored in the light receiving portion into the substrate serving as the overflow drain.