The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1988
Filed:
Jul. 30, 1984
Applicant:
Inventors:
Kunio Nakamura, Tokyo, JP;
Yukinori Kuroki, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 2311 ; 357 50 ; 357 55 ; 357 59 ; 365149 ;
Abstract
A semiconductor memory cell of a single field effect transistor and a single capacitor is surrounded or delimited at its three sides in the plan view by grooves formed in a semiconductor substrate. The capacitor in each memory cell is formed on one side wall surface or both side wall surfaces of this groove. With such construction, an increase in a capacitance can be achieved and a degree of circuit integration can be enhanced in distinction from the case where a groove is provided within an active region, that is, within a plan region of a capacitor section.