The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1988
Filed:
Feb. 03, 1986
Applicant:
Inventors:
Hisao Katto, Hinode, JP;
Kousuke Okuyama, Tachikawa, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 34 ; 437 40 ; 437 57 ; 437200 ; 437229 ; 437933 ;
Abstract
A semiconductor integrated circuit device wherein the source and drain regions of a MOSFET in an internal circuit have lightly doped drain (LDD) structures in order to suppress the appearance of hot carriers, and the source and drain regions of a MOSFET in an input/output circuit have structures doped with phosphorus at a high impurity concentration, in order to enhance an electrostatic breakdown voltage.