The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 1988

Filed:

Jun. 25, 1986
Applicant:
Inventors:

Grzegorz Kaganowicz, Belle Mead, NJ (US);

Ronald E Enstrom, Skillman, NJ (US);

John W Robinson, Levittown, PA (US);

Assignee:

RCA Corporation, Princeton, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 333 ; 148 33 ; 313619 ; 357 16 ; 357 20 ; 357 58 ; 357 61 ; 357 70 ; 427 39 ; 4272553 ; 428620 ; 428641 ; 428642 ;
Abstract

A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which form a semiconductor junction therebetween which extends to a surface of the device. The passivating layer, comprising silicon oxynitride having a refractive index between about 1.55 and 1.75 and a substantial hydrogen content, overlies the surface at the junction. Also disclosed is a method for fabricating such a device wherein the vapor deposition of the passivating layer is carried out at low temperatures from an ambient having a ratio of silicon-containing to oxygen- and nitrogen-containing precursors of between about 1:1.67 and 1:5.


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