The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1988
Filed:
Oct. 12, 1982
Applicant:
Inventor:
Joachim Dathe, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
428209 ; 357 52 ; 357 67 ; 428450 ;
Abstract
Passivation of aluminum-metallized silicon components by applying at least one silicon layer. For the purpose of the subsequent contacting, the components are annealed after the application of the silicon layer at a temperature from 480.degree. to 570.degree. C. if the silicon layer thickness exceeds 0.1 .mu.m and a temperature from 400.degree. to 500.degree. C. if the silicon layer is up to about 0.1 .mu.m thick, it being possible to omit the annealing operation if the silicon layer thickness is less than about 0.05 .mu.m.