The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1988
Filed:
Mar. 24, 1986
Howard K Leung, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for determining the etch bias of a particular semiconductor device feature layer material in a given etch process employing a hard mask reference material that changes very little or not at all during the etch under examination, and using a cross-sectional examination of the critical dimensions to determine the bias. Silicon dioxide would be a suitable hard mask material for a plasma etch bias study, for example. Preferably, a scanning electron microscope would determine the etch bias in one microphotograph. The need for optically taking two or more separate measurements to optically determine the etch bias, and the possiblility for incorporating error between measurements, is eliminated. In addition, the contribution of photoresist erosion to the etch bias of the device feature layer may be independently determined.