The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1987
Filed:
Feb. 20, 1986
Applicant:
Inventors:
Wilbur D Johnston, Jr, Mendham, NJ (US);
Judith A Long, Millburn, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437104 ; 437 94 ; 437-5 ; 437 40 ; 156613 ; 156614 ; 357 17 ; 357 22 ;
Abstract
It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.