The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1987
Filed:
Jun. 27, 1985
Kazuhiro Kawajiri, Kaisei-machi, Ashigarakami-gun Kanagawa, JP;
Hiroshi Tamura, Kaisei-machi, Ashigarakami-gun Kanagawa, JP;
Haruji Shinada, Kaisei-machi, Ashigarakami-gun Kanagawa, JP;
Mitsuo Saito, Kaisei-machi, Ashigarakami-gun Kanagawa, JP;
Yuzo Mizobuchi, Kaisei-machi, Ashigarakami-gun Kanagawa, JP;
Other;
Abstract
A solid-state photo sensor device includes a first electrode layer for allowing light to pass therethrough, a first amorphous silicon layer of one conductivity type formed below the first electrode layer, a second amorphous silicon layer of a conductivity type, other than the one conductivity type, disposed below the first amorphous silicon layer, and an output circuit for delivering in the form of an electric current photocarriers excited at least in the second amorphous silicon layer. The first and second amorphous silicon layers each contain inpurity elements whose concentration ranges from about 0 molPPM to 200 molPPM. The output circuit delivers as an electric current also photocarriers excited in the first amorphous silicon layer.