The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1987
Filed:
Dec. 30, 1982
Applicant:
Inventor:
Robert J Proebsting, Plano, TX (US);
Assignee:
Thomson Components - Mostek Corporation, Carrollton, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307443 ; 307448 ; 307584 ; 307304 ;
Abstract
The voltage gain of an MOS transistor inverter stage is made independent of the device threshold voltages and of channel lengths by making the length and width of the channel region of the upper load transistor equal to the length and width of the channel region of the lower driver transistor.
Proebsting, Robert. (1987). Mos transistor circuits having matched channel width and length (U.S. Patent No. 4714840). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4714840
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile