The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1987
Filed:
Jan. 14, 1987
Applicant:
Inventors:
Arumugam Satyanarayan, Bradford, MA (US);
Aland K Chin, Sharon, MA (US);
Assignee:
Polaroid Corporation, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
156635 ; 156643 ; 156653 ; 427 37 ; 427 38 ; 427259 ; 427264 ; 427265 ; 4273766 ; 437227 ; 437241 ;
Abstract
A method for providing a dual layer diffusion mask or encapsulation coating for use with III-V compound semiconductors, the dual layer coating comprising an inner layer of silicon which closely matches the coefficient of thermal expansion of the III-V compound semiconductor and an outer layer of silicon nitride which is relatively impermeable to subsequent metallization and for thereafter applying metallized contacts to the III-V compound semiconductor through selectively etched openings in the diffusion mask or encapsulation coating.