The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1987
Filed:
Apr. 26, 1985
Frederick G Weiss, Portland, OR (US);
Triquint Semiconductor, Inc., Beaverton, OR (US);
Abstract
The source and drain of a first depletion-mode MESFET (DFET) define the controlled current path of a switch, the switch being open or closed depending on whether the gate-to-source voltage (V.sub.gs) for the first DFET is greater or less than the pinch-off voltage (V.sub.p) for the first DFET. The first DFET has its gate connected to a first circuit node. A second DFET, connected as a source follower, has its gate connected to the source of the first DFET. A first diode has its anode connected to the first circuit node and its cathode connected to a second circuit node. A second diode has its cathode connected to the second circuit node and its a node connected to the source of the second DFET. At least one additional diode is connected anti-parallel to the first diode between the first and second nodes. A constant current source draws current either through the first diode or through the additional diode(s) in dependence upon the state of a control signal applied to a current steering network connected across the first diode.