The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1987
Filed:
Apr. 12, 1985
Jun Shibata, Sakai, JP;
Hiroyuki Serizawa, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
A semiconductor laser device has a double hetero construction such that a direct transition type semiconductor layer having a high refractive index is placed between direct transition type semiconductor layers having a low refractive index, and has an optical resonator formed in the direct transition type semiconductor layer of a high refractive index for enabling lasing operation. The condition of lasing is controllable by the transistor of the double hetero construction. The semiconductor laser device is of transistor structure and yet it constitutes integrated circuits for lasing. As an optoelectronic device, it can be advantageously employed in optical-fiber communication systems and optical information systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile