The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1987
Filed:
Dec. 01, 1986
Applicant:
Inventors:
Assignee:
Licentia Patent-Verwaltungs-GmbH, Frankfurt am Main, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357-4 ; 357 16 ; 357 15 ; 357 61 ;
Abstract
A modulation doped field effect transistor (MODFET) having an n-conductive channel. This channel is produced by a heterostructure formed on a silicon substrate and composed of a modulation doped Si.sub.1-x Ge.sub.x layer as well as an undoped Si layer.