The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1987
Filed:
Aug. 20, 1986
John Y Chen, Los Angeles, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A high density CMOS device structure that is essentially immune to latch-up, and a method of fabricating the structure, is described. This is obtained by providing a well region within and adjacent a surface of a substrate, the well region having a multiple retrograde doping density profile, and by providing source and drain regions within the well and adjacent the surface of the substrate, the source and drain regions having associated therewith a greater than average density of residual defects within said well region, the greater density of residual defects being generally associated with the deepest portions of the source and drain regions and the immediately underlying portions of said well region, respectively.