The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 1987

Filed:

Jan. 23, 1986
Applicant:
Inventors:

Harold J Hovel, Katonah, NY (US);

Thomas F Kuech, Ossining, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 38 ; 427377 ; 4273833 ; 4273839 ; 437225 ;
Abstract

An ion implantation annealing source for a controlled excess of the most volatile element of a multielement compound semiconductor whereby the source is provided with interstices and contains the most volatile element of the multielement semiconductor; and process of ion implantation employing the annealing source.


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