The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1987
Filed:
Aug. 14, 1986
Joseph J Daniele, Pittsford, NY (US);
Xerox Corporation, Stamford, CT (US);
Abstract
An IR LED array and method of fabrication having a GaAs wafer with one surface metallized to form a common LED contact. Epitaxially formed on this wafer is a GaAs/GaAlAs heterostructure with successive layers of Ga.sub.1-x Al.sub.x As-n, GaAs-p, and Ga.sub.1-y Al.sub.y As-p on the other surface, followed by an electrical contact layer of GaAs-p+ and an insulating layer of SiO.sub.2, discrete areas of the contact and insulating layers being removed by etching to form viewing windows for the individual LEDs, and with the area of the contact layer bordering the viewing windows being exposed and metallized to provide individual LED electrical contacts. In a second embodiment, the GaAs-p+ layer is dispensed with and the transparent electrically conducting coating is applied directly on both the insulating layer bordering the Ga.sub.1-y Al.sub.y As viewing windows and over the viewing windows. In a third embodiment, an edge emitting LED variant is provided and in a fourth embodiment, various light barrier designs are proposed for preventing optical crosstalk between the individual LEDs.