The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1987
Filed:
Sep. 05, 1985
Adrianus T Van Zanten, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A substrate bias generator in which a junction point of the capacitance and the diode of a charge pump is connected to the ground point of the circuit (and of the further circuit on the substrate for which the bias is generated) via two or more series-connected transistors. During the charging period of the capacitance the transistors are (fully) conductive, hence the capacitance is optimally charged as the conductive transistors cause no (or hardly any) voltage drop. During the pumping cycle all transistors are diode-connected, to bring about a negative voltage with respect to the ground point at the junction point. This negative voltage is limited to the sum of the threshold voltages of the diode-connected transistors.