The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 1987

Filed:

May. 29, 1986
Applicant:
Inventors:

Masakiyo Ikeda, Yokohama, JP;

Seiji Kojima, Tokyo, JP;

Hiroshi Kikuchi, Tokyo, JP;

Yuzo Kashiwayanagi, Yokosuka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437231 ; 118500 ; 118730 ; 156613 ;
Abstract

A chemical vapor deposition method for making a semiconductor thin film is disclosed, which is characterized in that, in the method wherein semiconductor thin films are allowed to deposit onto the substrates by allowing the susceptor in the shape of polygonal frustum fitted with a plurality of semicondutor substrates to the side faces thereof to rotate in the vertical type reaction tube, by introducing the source gases and the carrier gas into the tube, and by heating the substrates to allow the source gases to react through thermal decomposition, the number of rotations of susceptor is varied in terms of rectangular wave function, trapezoidal wave function or sine wave function and the susceptor is allowed to rotate in converse directions depending on the positive region and the negative region of the function.


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