The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1987
Filed:
Jul. 19, 1985
Applicant:
Inventor:
Richard H Womack, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365149 ; 357 236 ;
Abstract
A two transistor Dynamic Random Access Memory Cell and Array. Use of two pass transistors in series for the cell provides numerous additional capabilities for the DRAM array, and, in the preferred embodiment, provides bitline segment multiplexing, so that the sense amplifier pitch can be increased while the bitline capacitance as seen by the sense amplifier and by the memory cell is reduced. To accomplish this, the parasitic capacitance of the node between the two series pass transistors is kept to a minimum.
Womack, Richard. (1987). Two transistor dram cell and array (U.S. Patent No. 4704705). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4704705
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile