The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1987
Filed:
Nov. 07, 1986
Charles D Hechtman, Hopewell Township, Mercer County, NJ (US);
American Telephone and Telegraph Company, New York, NY (US);
Abstract
A driver circuit (10) for sourcing current to, and sinking current from, a load (12) comprises a pair of field effect transistors (18,20) each having their gate-to-source portion coupled between the load and one of a pair of voltage sources which serve to sink and source current, respectively. First and second bias networks (48,119) are each coupled to the gate and source of each of the field effect transistors, respectively. First and second junction transistors (42 and 100) are each coupled between a separate one of the first and second bias networks ( 48 and 119), respectively, and a current source (64) to provide a conductive path therebetween. The first junction transistor is rendered conductive to pass current to the first bias network so that a voltage of sufficient magnitude appears between the source and gate of the first field effect transistor to prevent the conduction thereof. The second junction transistor is rendered conductive alternately with the first junction transistor to divert current away from the first bias network and into the second bias network to render the second field effect transistor substantially non-conductive.