The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1987
Filed:
Feb. 25, 1987
Howard C Kirsch, Emmaus, PA (US);
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
As integrated field effect devices are scaled to smaller dimensions, the electric field in the channel increases for a constant operating voltage. This induces 'hot electron' effects that reduce device reliability. The present invention reduces the voltage (and hence electric field) across one or more transistors in various complementary (e.g. CMOS) logic circuits. This is achieved while still obtaining a full logic swing (e.g., 0-5 volts) at the output of the logic. The technique also allows the retention of previous voltage levels (e.g., 5 volts) for operation of other portions of the integrated circuit (e.g., dynamic memory cells).