The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1987
Filed:
Jan. 29, 1986
Franciscus A Vollenbroek, Eindhoven, NL;
Jan G Dil, Almelo, NL;
Henricus J Kroon, Eindhoven, NL;
Elisabeth J Spiertz, Eindhoven, NL;
Wilhelmus P Nijssen, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device, in which there is applied to a surface of a semiconductor substrate a base layer of photosensitive lacquer, which is coated with a top layer of photosensitive lacquer. By means of a first patterned irradiation, there is formed in the top layer a mask of which a contact copy is formed in the base layer during a second irradiation. A material which can be discolored is used for the top layer. During the first irradiation, the top layer is locally discolored, whereupon the layer thus discolored is used as a mask during the second irradiation. By the use of the discoloring top layer, additional processing steps, which would ensure from a wet development of the top layer, are avoided.