The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1987
Filed:
Jan. 16, 1986
Hans J Bauer, Boeblingen, DE;
Marianne B Froehlich, Boeblingen, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention relates to a method of making low resistance contacts between first and second metallization levels in integrated semiconductor circuits. In accordance with the invention, the semiconductor substrates to be cleaned are arranged on a substrate holder in a vacuum chamber. There, a gas plasma is generated by means of a getter electrode made of a material which has a high affinity for oxygen or oxygen containing compounds. This improves the vacuum by reducing the steam partial pressure. The actual cleaning of the exposed surfaces of the semiconductor substrate is effected subsequently by means of cathode sputtering through applying a radio frequency voltage to the substrate holder. By sputtering material from the surface of the getter electrode prior to cathode sputtering of the semiconductor substrate surface, the time for cleaning the semiconductor substrates can be considerably reduced so that it is also possible to clean substrates with masks of temperature-sensitive photoresists by means of cathode sputtering. The invention also comprises a device for carrying out said method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile