The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1987
Filed:
Feb. 19, 1986
Lubomir L Jastrzebski, Plainsboro, NJ (US);
RCA Corporation, Princeton, NJ (US);
Abstract
A plurality of first cavities is formed in the planar surface of a silicon substrate. A first oxide region of predetermined thickness is formed in each of the first cavities such that each of the first oxide regions has a surface which is coplanar with the substrate surface. A layer of monocrystalline silicon is then epitaxially deposited over the planar first oxide region/substrate surface. Second cavities are then formed through the monocrystalline silicon layer and into the substrate adjacent the first oxide regions, extending to a depth equal to approximately one-half that of the first oxide regions. The second cavities are then thermally oxidized so as to form second oxide regions therein, these second oxide regions being coplanar with the first oxide regions. Silicon is next epitaxially deposited on those portions of the monocrystalline silicon layer remaining on the first oxide regions so as to yield a continuous monocrystalline silicon sheet over the first and second oxide regions.