The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1987
Filed:
Jul. 01, 1985
Applicant:
Inventor:
Pierre Jeuch, Seyssins, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365154 ; 365 51 ;
Abstract
The storage cell comprises a bistable element formed from two channel P MOS transistors called first and second transistors, and two channel N MOS transistors, called third and fourth transistors, a fifth and a sixth channel N MOS transistor being used for controlling the bistable element, the different transistors of the cell being electrically interconnected in such a way that the interconnection lines used for connecting them do not cross.