The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1987
Filed:
Jul. 26, 1985
Gary L Heimbigner, Anaheim, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A gallium arsenide input receiver and method modify a conventional voltage level shifter circuit at its input to adapt it to operate on the lower gallium arsenide input voltages. A gallium arsenide depletion common gate amplifier FET receives the lower range of input voltages and turns off when the input signal equals or overcomes its V.sub.p voltage. This causes a pull-up device to apply the full voltage supply to the input of the voltage level shifter circuit, thereby enhancing the input signal voltage level to that originally used for the level shifter circuit. In a second embodiment of voltage compensation circuit is added to compensate for process variations in the V.sub.p voltage for the common gate amplifier FET. Reference voltage is developed by a circuit including a compensating depletion FET having a V.sub.p similar to that of the common gate FET which compensates for changes in the common gate V.sub.p caused by process and temperature variations such that for all receivers on a chip the input signal will optionally see an input V.sub.p of approximately 1.sup.v.