The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1987
Filed:
Aug. 26, 1985
Applicant:
Inventor:
Koichi Okada, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; G03C / ;
U.S. Cl.
CPC ...
430311 ; 430325 ; 430326 ; 430327 ; 430328 ; 430394 ; 430494 ; 430966 ; 430967 ;
Abstract
A method of lithography employing an electromagnetic wave having a very short wave length such as X-ray and a resist layer sensitive to that electromagnetic wave is disclosed. The irradiation process is divided into two steps. One step is selectively irradiating the electromagnetic wave, as in the prior art, to the resist layer in a desired pattern. The other steps is non-selective irradiation over the entire area of the resist layer. The latter step may be conducted with a plurality of workpieces such as semiconductor wafers simultaneously.