The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1987
Filed:
Jun. 30, 1986
Yoshinori Mimura, Wako, JP;
Yasuyuki Nagao, Yokohama, JP;
Kokusai Denshin Denwa Kabushiki Kaisha, Tokyo, JP;
Abstract
A method is disclosed for manufacturing a bismuth-containing oxide single crystal, in which vapor of bismuth or alkylated bismuth and vapor of an organic compound of other metal ion components of a crystal are introduced into a heated reaction chamber to be reacted with oxygen gas, so that the desired bismuth-containing oxide single crystal is deposited on a substrate prepared in the reaction chamber. A Bi.sub.12 SiO.sub.20 single oxide crystal can be produced by the use of bismuth or alkylated bismuth and alkylated silicon or silicon alkoxide or by the use of bismuth or alkylated bismuth and alkylated germanium or germanium alkoxide. A (Y.sub.1--x Bi.sub.x).sub.3 Fe.sub.5 O.sub.12 single crystal can be poduced by the use of bismuth or alkylated bismuth yttrium alkoxide and carbonyl iron.