The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1987
Filed:
Oct. 15, 1985
Applicant:
Inventors:
Yoichi Sasai, Hirakata, JP;
Minoru Kubo, Katano, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437129 ; 437121 ;
Abstract
Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of solutions for use in epitaxial growth, in which method, epitaxial growth of a layer having thickness of less than 500 .ANG. is carried out under the condition that the slider is sliding in one direction, i.e., without stopping the sliding movement of the slider. Thereby, the thickness of the growth layer is controlled by controlling the time when the substrate contacts the solution, or by the sliding speed of the slider.