The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 1987

Filed:

Mar. 06, 1986
Applicant:
Inventors:

Yoshito Seiwa, Itami, JP;

Saburo Takamiya, Itami, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 46 ; 372 48 ; 357 17 ; 357 16 ;
Abstract

A laser diode in accordance with the present invention comprises: a substrate (11) of p-GaAs; a current constricting layer (12) of n-GaAs formed with a slit (13) over the substrate, wherein the slit is opened through the constricting layer and separates the constricting layer into two areas; a liner(s) (21) of p-GaAs formed on at least both the inner side walls of the slit; a lower clad layer (14) of p-Ga.sub.0.6 Al.sub.0.4 As formed over the constricting layer, burying the slit; an active layer (15) of p-Ga.sub.0.9 Al.sub.0.1 As which is formed over the lower clad layer and has a refractive index higher than that of the lower clad layer; and an upper clad layer of n-Ga.sub.0.6 Al.sub.0.4 As which is formed over the active layer and has a refractive index lower than that of the active layer.


Find Patent Forward Citations

Loading…