The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1987
Filed:
Oct. 21, 1985
Applicant:
Inventors:
Stephen J Cosentino, Austin, TX (US);
James M Rugg, Tempe, AZ (US);
Richard W Mauntel, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 2312 ; 357 42 ; 357 91 ; 357 90 ; 357 89 ;
Abstract
A deep, buried n.sup.- channel blanket implant beneath both n.sup.- channel and p-channel devices in MOS integrated circuits, whether complementary MOS (CMOS) or not. It is known to use deep, lightly-doped n.sup.- channel implant to improve the characteristics of p-channel (PMOS) devices, although one skilled in the art would expect such an n.sup.- implant to be detrimental to n-channel (NMOS) devices. It has been discovered that such implants not only do not degrade the NMOS devices, but in fact improve their performance, with respect to body effect and junction capacitance.