The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 1987

Filed:

Sep. 19, 1986
Applicant:
Inventors:

Shuji Yazu, Itami, JP;

Hitoshi Sumiya, Itami, JP;

Junji Degawa, Itami, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156603 ; 156D / ; 156D / ; 423210 ;
Abstract

Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.


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