The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1987
Filed:
Dec. 23, 1982
Herbert L Wilson, Woodbridge, VA (US);
William A Guiterrez, Woodbridge, VA (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A high pressure furnace and reusable demountable containment means for setive in situ information of epitaxial layers on a semiconductor substrate while under gas overpressure. The containment means has vent means therein for allowing the inert and reducing or reactive gases in an inner chamber of the furnace to enter into the interior of the containment means to equalize pressures on each side of the housing and to semi-confine the vapor from the epitaxial growth source materials in the interior of the containment means. The containment means has a removable, i.e. demountable, form-fittedly sealed plug which is removed to insert the substrate and growth source elements, which are mounted in a close-space relationship on a support structure, therein. The support structure is inserted back into the containment means and the plug is form fittedly sealed thereto for performing the epitaxial layering.