The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1987
Filed:
Nov. 21, 1985
Tetsuya Iizuka, Funabashi, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An MOS semiconductor device comprises a MOS operation circuit including a plurality of MOS transistors each with a reduced channel length and an operation voltage setting circuit for supplying an operation voltage lower than the power source voltage between the first and second operation voltage receiving terminals. The back gates of the MOS transistors in the MOS operation circuit are connected to a power source terminal or ground. The operation voltage setting circuit is inserted between the MOS operation circuit and either the power source terminal or ground and develops a voltage drop in accordance with the operating current flowing through the MOS operation circuit.