The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1987
Filed:
Nov. 21, 1984
Satyen Mukherjee, San Jose, CA (US);
Thomas Chang, Santa Clara, CA (US);
Exel Microelectronics, Inc., San Jose, CA (US);
Abstract
An electrically erasable programmable memory device which is programmable in the manner of an EPROM and erasable in the manner of an EEPROM. A dielectric layer between the control gate and the floating gate is provided having a high dielectric constant. A thin, uniform gate dielectric layer is provided which demonstrates minimal trapping. Finally, an asymmetrical source/drain junction is provided wherein the source includes a shallow portion and a deeper portion, which deeper portion defines the overlap between the source and the floating gate. In the preferred embodiment the dielectric between the control gate and the floating gate comprises tantalum pentoxide, the thin dielectric layer comprises oxynitride, and the deep diffusion portion of the source comprises phosphorous.