The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1987
Filed:
Sep. 22, 1986
Erhard Kohn, Orsay, FR;
Thomson-CSF, Paris, FR;
Abstract
The invention relates to a vertical field effect transistor operating under ballistic conditions at very high frequencies (100-200 GHz). In order to increase the output impedance of this transistor, as well as its power, the field effect of the first gate is decoupled from the drain by the field effect of a second gate. The two gates are carried by two opposite sides of a mesa etched in the active layer beneath the drain. The second gate is displaced with respect to the first gate and is closer to the drain. The displacement is obtained by an insulating layer beneath the second gate. The two gates are successively deposited by lateral projections. Application to ultra-high frequency systems.