The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1987
Filed:
Jan. 23, 1987
Applicant:
Inventor:
Yuji Kajiwara, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2502 / ; 357-2 ; 357 30 ;
Abstract
The contact type image sensor includes a transparent insulator substrate, a common electrode formed on a main surface of the insulator substrate, an amorphous silicon layer formed on the common electrode, a plurality of individual electrodes formed on the amorphous silicon layer, an insulator layer covering the amorphous silicon layer and having openings at the portions of the individual electrodes, and a plurality of wiring layers formed on the insulator layer for leading out the output signal in response to the light introduced from a back surface of the insulator substrate. A photo-shield layer may be interposed between the common electrode and the amorphous silicon layer.