The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1987
Filed:
Aug. 20, 1986
Kernforschungszentrum Karlsruhe GmbH, Karlsruhe, DE;
Abstract
A method for producing a mask for deep-etch x-ray lithography in which the mask pattern of a thin-film mask having thin absorber structures is transferred by recopying with soft X-ray radiation to an X-ray resist layer whose layer thickness corresponds to the thickness of the absorber structures of the mask to be subsequently produced. Transfer errors during recopying are avoided by producing the thin-film mask directly on one side of a carrier membrane; applying a positive X-ray resist layer on the other side of the carrier membrane; irradiating the positive X-ray resist layer with approximately parallel X-ray radiation through the thin-film mask to produce irradiated portions in the positive X-ray resist layer; removing the irradiated portions of the positive X-ray resist layer to expose portions of the carrier membrane; electrolytically depositing elements having a high atomic number, e.g., heavy metals, onto the exposed portions of the carrier membrane, removing the remaining resist material and etching away the thin-film mask.