The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1987
Filed:
Mar. 03, 1986
Alfred J Van Roosmalen, Eindhoven, NL;
Anton P Van Arendonk, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device, in which a double layer consisting of a layer of polycrystalline silicon and a top layer of a silicide is applied to a surface of a semiconductor substrate coated with a layer of silicon oxide. After an etching mask has been provided, the double layer is etched in a plasma formed in chlorine gas to which up to 20% by volume of tetrachloromethane is added until the layer of polycrystalline silicon is etched. Thus, the double layer is etched anisotropically and the layer of silicon oxide is attacked in practice to a very small extent.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile