The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1987
Filed:
Jul. 22, 1986
Hendrik C De Graaff, Eindhoven, NL;
Wilhelmus G Voncken, Hamburg, DE;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor device has a safety device which includes an improved lateral bipolar transistor structure. The improvement is obtained by incorporating an auxiliary field effect transistor which has the emitter as its source zone and the collector as its drain zone, and in which the threshold voltage of the auxiliary field effect transistor is lower than the avalanche breakdown voltage of the collector-base junction of the lateral transistor. As a result, the lateral transistor switches sooner, at a lower voltage, to the readily conductive on-state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile