The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 1987

Filed:

Nov. 30, 1984
Applicant:
Inventors:

Henry Yves, Paris, FR;

Andre Nicollet, Paris, FR;

Michel Villard, Paris, FR;

Assignee:

Thomson - CSF, Paris, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 23 ; 2504922 ; 437 80 ; 437906 ;
Abstract

A method for forming indium antimonide photodiodes by ionic implantation of the S.sub.34.sup.+ isotope of sulphur on a p type indium antimonide substrate. These photodiodes may be readily coupled to an N channel charge transfer device which provides multiplexing of the photodiodes and readout of the charges.


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