The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1987
Filed:
Apr. 04, 1985
Kornelis J Wagenaar, Nijmegen, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor device includes insulated gate field effect transistors, with which logic gate circuits having a satisfactory switching speed and a high packing density can be realized. The logic gate circuits are composed of transistor structures having a common source zone (22), which each comprise a gate (33), a second semiconductor zone (25) and one or more drain zones (28) and are manufactured in DMOS technology. The gates are strip-shaped or have at least a strip-shaped part. The gate circuits can be integrated in a simple manner with one or more high-voltage transistors manufactured in DMOS technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile