The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 1987

Filed:

Jun. 25, 1984
Applicant:
Inventors:

Toshio Baba, Tokyo, JP;

Takashi Mizutani, Tokyo, JP;

Masaki Ogawa, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 16 ; 357-4 ; 357 61 ; 357 63 ; 148D / ; 148D / ; 148D / ; 148D / ;
Abstract

The superlattice type semiconductor material has a multilayered structure of first layers of semiconductor containing impurities and having a thickness thinner than electron or hole wavelength and second layers of semiconductor free from impurities or insulator having such a thickness that electrons or holes may penetrate by tunneling effect, the first and second layers being alternately piled. Electrons or holes distribute uniformly over the entire of the multilayered structure to show a property of uniform semiconductor material.


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