Infrared imaging array employing metal tabs as connecting means

Abstract

An infrared radiation detection device utilizing an array of metal electrodes deposited on the insulated surface of a suitable semiconductor material such as an indium antimonide substrate. The detector electrodes are read out by discharging each electrode to a preselected voltage through an integrating capacitor. The charge accumulated on each integrating capacitor is related to the charge collected at the insulator substrate interface under each detector electrode due to interaction of the infrared radiation with the indium antimonide substrate. The integrating capacitors and related charging and switching circuitry are located on a silicon substrate. The integrating capacitors and related circuitry on the silicon substrate are connected to the detector electrodes on the indium antimonide substrate by means of an array of metal tabs fabricated on the silicon substrate and deflected to contact the detector electrodes by electrostatic attraction. Each detector electrode and associated metal tab is isolated from the switching and charging circuitry and row connectors by a metal-oxide-semiconductor-field-effect transistor fabricated adjacent to each tab on the silicon substrate. The isolation provided by the MOSFETs avoids cross-talk between the various detectors in the array and avoids the diminution of the signals from the elements by the capacitance associated with row and/or column connectors.