The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1987
Filed:
May. 06, 1985
Applicant:
Inventor:
K R Ramaprasad, Princeton, NJ (US);
Assignee:
Chronar Corporation, Princeton, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437126 ; 136258 ; 20415745 ; 20415746 ; 423346 ; 427 35 ; 427 39 ; 427 531 ; 427 541 ;
Abstract
Hetero-augmentation of semiconductor materials by reacting a mixture of (1) a gaseous precursor of a host semiconductor with (2) a gaseous compound of the host and a hetero atom. The host precursor is a semiconductor hydride or a mixture of hydrides, including those of silicon and germanium. The compound of the host and hetero-atom includes a silyl or germyl dopant or alloyant. Suitable dopants are phosphorous, arsenic, and nitrogen. Suitable alloyants are other semiconductors and nitrogen. The reaction can take place pyrolytically, by electrical discharge, or photochemically.